Committed to providing customers with complete solutions for high-performance and low-cost RF microwave chips and Microsystems

The existing staff of more than 100 people, R & D personnel accounted for more than 40%, mainly from the key research institute of CLP, postgraduate education accounted for up to 50%.

Based on the advanced and stable GaAs(gallium arsenide) and GaN(gallium nitride) process lines at home and abroad, Zhisi Micro is capable of designing, developing and batting microwave and millimeter-wave integrated chip circuits within the DC-110G frequency range, including low-noise amplifiers, ultra-wideband power amplifiers, high-linearity power amplifiers, high-power GaN chips, high-power internal matching tube amplifiers (IMFETs), multi-functional chips, switches, attenuators, phase shifters, frequency multipliers, mixers, VCOs, etc Mass production capacity.